CM1200HA-66H is MITSUBISHI [Mitsubishi Electric Semiconductor] company product |
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![]() CM1200HA-66H PDF Download |
File Size : | 53.02 KB |
| Manufacturer: | MITSUBISHI [Mitsubishi Electric Semiconductor] | |
| Description: |
...HVIGBT (High Voltage Insulated Gate Bipolar Transistor) ModulesPRELIMINARYNotice: This is not a final specification.Some parametric limits are subject to change.... ...UnitNote 1. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode.2. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating.3. Junction temperature (Tj) should not increase beyond 150°C.... ...Thermal resistanceELECTRICAL CHARACTERISTICS (Tj = 25°C)HVIGBT (High Voltage Insulated Gate Bipolar Transistor) ModulesPRELIMINARY... |
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