Description:
...HGT1S5N120BNDS are Non-Punch Through (NPT) IGBTdesigns. They are new members of the MOS gated highvoltage switching IGBT family. IGBTs combine the bestfeatures of MOSFETs and bipolar transistors. This device... ...HGTG5N120BNDHGTP5N120BNDHGT1S5N120BNDS UNITSCollector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV... ...state conduction loss of a bipolar transistor. The IGBT usedis the development type TA49308. The Diode used is thedevelopment type TA49058 (Part number RHRD6120).The IGBT is ideal for many high voltage switching...