Description:
...DIE THICKNESS: 2.6 mils (65 μm typ.)BONDING PADS: 1.9 x 2.4 mils (50 x 60 μm typ.)DESCRIPTION AND APPLICATIONSThe LP3000 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron... ...recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure andprocessing have been optimized for reliable high-power applications. The LP3000 also features Si3N... ...Solid State2W Power PHEMTPhone: (408) 988-1845 Internet: http://www.filtronicsolidstate.com Fax: (408) 970-9950FEATURES...