Features: • GSM Performance, Full Frequency Band (1930 - 1990 MHz) Power Gain — 13 dB (...
| Configuration : | Single | Transistor Polarity : | N-Channel |
| Frequency : | 400 MHz | Gain : | 13 dB at 150 MHz |
| Output Power : | 30 W | Drain-Source Breakdown Voltage : | 65 V |
| Continuous Drain Current : | 5 A | Gate-Source Breakdown Voltage : | +/- 40 V |
| Maximum Operating Temperature : | + 150 C | Package / Case : | Case 211-07 |
| Packaging : | Tray |
• Guaranteed 28 Volt, 150 MHz Performance Output Power = 30 Watts Minimum Gain = 13 dB Efficiency - 60% (Typical)
• SmallSignal and LargeSignal Characterization
• Typical Performance at 400 MHz, 28 Vdc, 30 W Output = 7.7 dB Gain
• 100% Tested For Load Mismatch At All Phase Angles With 30:1 VSWR
• Low Noise Figure - 1.5 dB (Typ) at 1.0 A, 150 MHz
• Excellent Thermal Stability, Ideally Suited For Class A Operation
• Facilitates Manual Gain Control, ALC and Modulation Techniques
| Rating | Symbol | Value | Unit |
| DrainSource Voltage | VDSS | 65 | Vdc |
| DrainGate Voltage (RGS = 1.0 M) |
VDGO | 65 | Vdc |
| GateSource Voltage | VGS | ±40 | Vdc |
| Drain Current - Continuous | ID | 5.0 | Adc |
| Total Device Dissipation @ TC = 25°C Derate above 25°C |
PD | 100 0.571 |
Watts W/°C |
| Storage Temperature Range | Tstg | 65 to +150 | °C |
| Operating Junction Temperature | TJ | 200 | °C |
(7911)
(4854)
(8968)
(5251)
(272)
(6039)
MRF137 Data Sheet