| Part No. |
Description |
Part No. |
Description |
| MTB35ZAM |
|
MTB35ZAV |
|
| MTB35ZAVM |
|
MTB35ZB |
|
| MTB35ZBM |
|
MTB35ZBV |
|
| MTB35ZBVM |
|
MTB35ZC |
|
| MTB35ZCM |
|
MTB35ZCV |
|
| MTB35ZCVM |
|
MTB35ZD |
|
| MTB35ZDM |
|
MTB35ZDV |
|
| MTB35ZDVM |
|
MTB35ZE |
|
| MTB35ZEM |
|
MTB35ZEV |
|
| MTB35ZEVM |
|
MTB35ZF |
|
| MTB35ZFM |
|
MTB35ZFV |
|
| MTB35ZFVM |
|
MTB35ZG |
|
| MTB35ZGM |
|
MTB35ZGV |
|
| MTB35ZGVM |
|
MTB36N06 |
Vendor: ON
Pack: TO-263 |
| MTB36N06E |
The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require t... |
MTB36N06V |
TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles th... |
| MTB36N06VT4 |
TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles th... |
MTB3N100E |
The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require t... |
| MTB3N100ET4 |
The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require t... |
MTB3N120E |
The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require t... |
| MTB3N120ET4 |
The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require t... |
MTB3N60E |
This advanced high voltage TMOS E–FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offe... |
| MTB40N10E |
This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–s... |
MTB40N10ET4 |
This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–s... |
| MTB42N03 |
This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–s... |
MTB4302 |
This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–s... |
| MTB43N03 |
This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–s... |
MTB4BF |
This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–s... |
| MTB4N5 |
This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–s... |
MTB4N50ET4 |
This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–s... |
| MTB4N80E |
The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require t... |
MTB4N80E1 |
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addit... |
| MTB4N80ET4 |
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addit... |
MTB5000 |
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addit... |
| MTB5000-G |
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addit... |
MTB5000-HR |
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addit... |
| MTB5000-O |
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addit... |
MTB5000-RG |
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addit... |
| MTB5000-UR |
|
MTB5000-Y |
|
| MTB50HAM |
|
MTB50HAV |
|
| MTB50HAVM |
|
MTB50HBM |
|
| MTB50HBV |
|
MTB50HBVM |
|
| MTB50HCM |
|
MTB50HCV |
|
| MTB50HCVM |
|
MTB50HDM |
|
| MTB50HDV |
|
MTB50HDVM |
|
| MTB50HEM |
|
MTB50HEV |
|
| MTB50HEVM |
|
MTB50HFM |
|
| MTB50HGM |
|
MTB50HGV |
|
| MTB50HGVM |
|
MTB50N03 |
D/C: 12000 |
| MTB50N06 |
Vendor: ON
Pack: TO-263
D/C: 01+ |
MTB50N06E |
Vendor: MOTOROLA
Pack: SOT220
D/C: 07+ |
| MTB50N06EL |
These TMOS Power FETs are designed for high speed, low loss power switching applications such as switching regulators, converters, solenoid and relay drivers.... |
MTB50N06ET4 |
These TMOS Power FETs are designed for high speed, low loss power switching applications such as switching regulators, converters, solenoid and relay drivers.... |
| MTB50N06L |
These TMOS Power FETs are designed for high speed, low loss power switching applications such as switching regulators, converters, solenoid and relay drivers.... |
MTB50N06T4 |
These TMOS Power FETs are designed for high speed, low loss power switching applications such as switching regulators, converters, solenoid and relay drivers.... |
